Investigation on Metal RIE Dry Etching Conditions in the Thin-Film-Transistor 4-Mask Fabrication Process

摘要：

Metal RIE dry etching conditions are investigated in the 4-Mask fabrication process through matrix test and power split test. Effect of metal dry etching conditions on the TFT electrical characteristics is also analyzed. TFTs show low Ion current when high power is applied. The damage to a-Si layer, caused by strong ion bombarding effect, contributes to this low on-state current. Based on these analytical results, the practical conditions for metal RIE dry etching has been concluded and has been successfully applied in our 4-Mask fabrication process with high yield.

关键词： Metal Etching Thin Film Transistor Matrix Test

作者: Zhangtao Wang Tae Yup Min Haijun Qiu Xu Chen Seung Moo Rim

作者单位: Process Engineering Department, BOE Optoelectronics Technology Group Co., LTD.,No. 8 Xihuanzhonglu, BDA, Beijing 100176, China

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 1219-1222

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）