Enhanced Performance and Reliability for Solid Phase Crystallized Poly-Si TFTs with Argon Ion Implantation
Performance and reliability improvement for polycrystalline silicon thin-film transistors (poly-Si TFTs) with Argon ion implantation are proposed for the first time. By adopting this novel surface-micleation solid-phase-crystallization scheme, not only the grain size of poly-Si can be increased but also the intragranular defects can be suppressed effectively. Therefore, a high quality of poly-Si film in channel with better crystallinity is formed. Argon-implanted TFTs have been successfully fabricated and the experimental results demonstrate a superior field-effect mobility of 46. 06 cm2/Vs, a fewer grain boundary trap density of 3.44 × 1012 cm -2 than those of conventional TFTs. The novel proposed structure is a very promising candidate for the future high-performance large-area device applications.
Surface-nucleation Interface-nucleation Solid-phase Epitaxy Regrowth Thin-film Transistors (TFTs)
Chia-Wen Chang Che-Lun Chang Wun-Chen Luo Jam-Wem Lee Tan-Fu Lei
Institute of Electronics, National Chiao Tung University,1001 Ta-Hsueh Road Hsinchu 30050, Taiwan, C National Nano Device Laboratories, Science-based Industrial Park,Hsinchu, Taiwan, China
国际会议
上海
英文
1223-1228
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）