Performance and Reliability Improvement for Poly-Si TFTs Using Fluorinated Silicate Glass Inter-Layer-Dielectric Passivation
Polycrystalline silicon thin-film transistors (poly-Si TFTs) with fluorinaled silicate glass (FSG) inter-layer dielectric (ILD) passivation layer were proposed and demonstrated in this study. The presence of outdiffused fluorine atoms from FSG layer can eliminate Si dangling bonds at the grain boundaries near the drain side. The proposed short channel poly-Si TFTs with FSG ILD passivation have a slightly improved on-current, a obviously suppressed serious kink-effect, and a remarkably reduced off-leakage current than those with undoped SiO2 ILD passivation. Furthermore, the incorporation of fluorine atoms in poly-Si film can also form stronger Si-F bonds at drain side to enhance die immunity to hot carrier stress. Besides, the proposed TFTs structure is simple, low cost, and process compatible with present TFTs manufacturing technology.
Fluorinated Silicate Glass (FSG) Fluorine Ion Implantation Thin-film Transistors (TFTs)
Chia-Wen Chang Tin-Wei Wu Tong-Yi Wang Che-Lun Chang Jam-Wem Lee Tan-Fu Lei
Institute of Electronics, National Chiao Tung University,1001 Ta-Hsueh Road, Hsinchu 30050, Taiwan, National Nano Device Laboratories, Science-based Industrial Park,Hsinchu, Taiwan, China
国际会议
上海
英文
1229-1232
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）