Dynamic Negative Bias Temperature Instability in Low-Temperature Poly-Si Thin-film Transistors

摘要：

Dynamic negative bias temperature instability in p-channel low-temperature poly-Si thin-film transistors was studied in this paper. The degradation of the devices was found to be voltage and temperature dependent. In addition , the frequency and duty ratio of the gate pulse affects the degree of the device degradation. The mechanism of the device degradation was investigated , and a physical model is proposed to explain the mechanism.

关键词： Dynamic Negative Bias Temperature Instability Thin-film Transistor

作者: Chih-Yang Chen Tong-Yi Wang Ming-Wen Ma Wei-Cheng Chen Hsiao-Yi Lin Kuan-Lin Yen Shen-De Wang Tan-Fu Lei

作者单位: Institute of Electronics, National Chiao Tung University,1001 Ta-Hsueh Rd. , Hsin-Chu 300, Taiwan, C Toppoly Optoelectronics Corp., Miao-Li, Taiwan, China

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 1233-1237

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）