Simulation of the Spindt-type Electron Emitter with Small Gate-hole
In this paper, a simulation with finite element method was carried out on the dispersion of electron beam (DEB) and emission efficiency (EE) of Spindt-type emitter with gate-hole several ten nanometers in size. The calculated results show that the shape of gate-hole (SGH) is an important parameter for the DEB and EE when the gate-hole is as small as 100 nm. The Spindt emitter can be developed to emit electrons with a small dispersion and high efficiency after optunizing the parameters of the gate-hole.
Field Electron Emission Dispersion Angle Emission Efficiency Finite Element Method
Cuihua Song Guang Yuan Aiqing Liu Dabo Guo
Department of Physics, Ocean University of China, Qingdao 266071, China
国际会议
上海
英文
1286-1290
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）