Red Organic Light-emitting Diodes Using 9, 10-di(2-naphthyl) -anthracene (ADN) as the Host Material
We present red organic light-emitting diodes (OLEDs) with high efficiency and stability based on a wide band gap host material 9, 10-di (2-naphthyl) anthracene (ADN). In these diolds, N, N-bis(1-naphthyl)-N, N-diphenyl-1, 1-biphenyl-4, 4 diamine(NPB) and tris-(8-ydroxy-quinoline)aluminum (Alq) are used as hole and electron transport layers, respectively. Coumarin6 (C6) and 4-(dicyano-methylene)-2-t-butyl-6-( 1, 1,7, 7-tetramethyl-julolidyl-9-enyl)4H-pyran (DCJTB) are co-doped into the ADN emitting layer. Utilizing the two-step energy transfer from ADN to C6 and then from C6 to DCJTB, we achieved pure red organic light-emitting devices, which showed improved optical and electrical characteristics. Compared with devices where the emitting layer is made of Alq and DCJTB, the emission efficiency and stability of the ADN-based devices are greatly improved and the turn-on voltage is also decreased. The co-doping technique provides a promising way to utilize wide band gap materials as the host to make red OLEDs, which will be useful in improving the EL performance of devices and simplifying the process of fabricating full-color OLEDs.
OLED Red OLED Co-doped ADN
Hao Tang Ying Li Xiuru Wang Wengen Wang Runguang Sun
School of Material Science and Engineering, Shanghai University, Jiading Campus, P. O. Box 815, 453 Tacheng Road, Jiading, Shanghai 201800, China
国际会议
上海
英文
1376-1380
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）