Improved Performance of Organic Light-emitting Devices by Inserting Ultra-thin Hole-blocking Layers both in Hole-transporting Layer and Electron-transporting Layer
Tris-(8-hydroxyqunoline) aluminum (Alq3)-based organic light-emitting devices (OLEDs) using different thickness of 2, 9-Diraethyl-4, 7-diphenyl-1, 110-phenanthorline (BCP) as hole-blocking layer inserted both in electron-transporting layer and hole-transporting layers have been fabricated. The devices have a configuration of indium tin oxide (ITO)/ m-MTDATA (80 nm)/BCP (X nm)/NPB (20 nm)/Alq3(40 nm)/BCP (X nm)/Alq3(60 nm)/Mg:Ag (200 nm), where m-MTDATA is4, 4, 4-Tris(N-3-methylphenyl-N-phenyl-amino) triphenylamine, which is used to improve hole injection, and NPB is N, N-Di (naphth-2-yl) -N, N-diphenyl-benzidine. X is changed from 0 to 2 nm. For device with optimal thickness of 1 nm BCP, Current efficiency and power efficiency were significantly improved by 47％ and 43％ , respectively, compared to the standard device without BCP layer. The improved efficiencies should be due to well balance the electron and hole injection, exciton formation and confinement within the luminescent region.
Organic electronics organic light-emitting diodes vacuum deposition thin film hole-blocking layer
B. J. Chen Y. Divayana X. W. Sun K. R. Sarma
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, S School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, S Aerospace Electronic Systems, Honeywell,21111 N. 19th Avenue, Phoenix, Arizona 85027, U.S.A.
国际会议
上海
英文
1412-1416
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）