Improved Performance of Organic Light Emitting Diode by Thermal Annealing
The effects of post-fabrication thermal annealing on the performance and stability of organic light-emitting diodes (OLEDs) were systematically investigated in standard ITO/m-MTDATA/NPB/Alq3 devices. Electrical and optical performance, surface morphology of organic thin films, and operation stability of the devices with different thermal-treatments were measured and monitored. It was found that devices that were thermally annealed at 70℃ exhibited the best performance. Moreover, those devices had the best thin film morphology and the lowest degradation of EL performance. The operating stability of the heat-treated device was improved by a factor of over 1.7 times then annealed devices and a halfbrightness lifetime of over 7 200 h was obtained. The 70℃ thermally annealed devices have modified and enhanced the bonding at the interfaces of organic layer, resulting in decreased turn on voltage, less leakage current, higher luminescence and longer lifetime.
Thermal Annealing Surface Morphology
Guan-Ting Chen Jin-Shian Tsai Cheng-Chieh Hou Shui-Hsiang Su Meiso Yokoyama
Department of Electrical Engineering, 1-Shou University Department of Electronic Engineering, 1-Shou University 1, Section 1, Hsueh-Cheng RD, Ta-Hsu Hsiang,
国际会议
上海
英文
1450-1455
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）