Metal Oxides as Interlayer on Indium Tin Oxide for High Performance Organic Light-emitting Diodes
We demonstrate extremely stable and highly efficient organic light-emitting diodes (OLEDs) based on a transition metal oxide (MoO3, V2O5, WO3) as buffer layer on indium tin oxide (ITO). Significant features of transition metal oxide as buffer layer are that the OLEDs show low operational voltage, high electroluminescence (EL) efficiency and good stability in a wide range of metal oxide thickness. A red OLED with structure of ITO/MoO3/ N, N-di (naphthalene-1 -yl) -N, N-diphenyl-benzidine (NPB)/ tris(8-hydroxyquinoline) aluminum (Alq3): Rubrene: 4-(dicy-anomediylene)-2-t-butyl6(1, 1,7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)/ Alq3/LiF/Al shows a long lifetime of over 42 000 h at 100 cd/m2 initial luminance, and the current efficiency and power efficiency reaches 16 cd/A and 15.3 1m/W, respectively. The turn-on voltage is 2.4 V. The significant enhancement of the EL performance is attributed to the improvement of hole injection and optical transmission.
Organic Light-emitting Diodes Metal Oxide High Efficiency Lifetime
Han You Yanfeng Dai Zhiqiang Zhang Dongge Ma
State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022, China
国际会议
上海
英文
1469-1472
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）