Electrical and Optical Properties of Al-doped ZnO Films for Organic Light Emitting Devices with Processing Parameters
Al-doped Zinc Oxide (AZO) films is one of the most attractive materials for the transparent conducting oxide. In this study, The electrical and optical properties of Al-doped ZnO films were examined. The films were grown on glass substrates at RT and 300℃ with various working pressures by using RF-magnetron sputtering. The crystal orientation, grain size, the surface roughness, and the sheet resistance of AZO films were changed with substrate temperature and working pressure. The (002) peak and (103) peak were preferentially oriented at RT and 300℃, respectively. The grain size and surface roughness increased with increasing working pressure. Electrical properties of the AZO films improved with increasing substrate temperature and working pressure. And optical properties of all AZO films indicated high transmittance regardless of processing conditions.
Transparent Conducting Oxide AZO (Al-doped ZhO) RF-sputtering Flat Panel Display
Youn-Jeong Hong Hye-Jin Kim Kyu-Mann Lee Sang-Ho Kim Yeong-Cheol Kim Chang-Jung Kim In-Woo Kim
Dept. of Materials Engineering, Korea University of Technology and Education,307, Gajeon-ri, Byungch Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440 -600, Korea Dept. of Materials Science and Engineering, Pohang Univ. of Science and Technology, Pohang 790-784,
国际会议
上海
英文
1483-1488
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）