Design and Simulation on Voltage Programmed a-Si TFT AMOLED Pixel Circuit
Active matrix organic light-emitting diode (AMOLED) has attracted considerable interest in the filed of flat panel displays for high quality. Poly-silicon thin-film transistors (poly-Si TFTs) employing an excimer laser annealing (EL A) have been widely considered for pixel elements for AMOLED because of their high current driving capability. However, the nonuniformity and maintenance of an ELA facility is a severe problem to fabricate large-size and low-cost AMOLED panels. In this paper a new amorphous silicon thin-film transistor (a-Si TFT) pixel circuit for the active matrix organic light-emitting diode (AMOLED) employing a voltage programming has been proposed which consists of five switching TFTs, one driving TFT, and one capacitor. During the simulation with PSpice, the influence of Vdd voltage, storage capacitor( CS) and ratio of W/L of switching TFT (T3、T4、T1), driving TFT (T2) on the output characteristics of this pixel electrode circuit were analyzed in details and then the reasonable parameters of the circuit was confirmed. The further simulation results indicate that the proposed a-Si: H TFT pixel circuit can successfully compensate the variation of OLED luminance caused by the threshold voltage, which is not consistent for difference a-Si: H TFTs and pixels of OLEDs, then the gray scale uniformity of the screen can be improved.
Active Matrix Organic Light-emitting Diode (AMOLED) Amorphous Silicon Thin-film Transistor (a-Si: H TFT) Pixel Electrode Circuit PSpice
Mingqing Zhang Feng Teng Chunjun Liang
Institute of Optoelectronic Technology,Key Laboratory of Luminescence and Optical Information, Ministry of Education,Beijing Jiaotong University, Beijing, China
国际会议
上海
英文
1518-1522
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）