Activation of p-GaN in a Two-step Rapid Thermal Annealing Process

摘要：

A two-step rapid thermal annealing process was optimized to activate magnesium doped gallium nitride layer (P-GaN). The optimized process consists of a long-term step (4 min) at 600℃ followed by a short-term step at 850℃ for 1 min. A hole concentration of 1.40×1018 cm -3 and a resistivity as low as 0.16Ω-cm were achieved for the activated sample. The specific contact resistance for Ni/Au-contacted p-GaN and the turn-on voltage of GaN-based LEDs was determined to be 1.0 × 10 -4 Ω ·cm2 and less than 3.2 V at 20 mA, which are improved results from those achieved by standard annealing process (750℃ for 20 min).

关键词： Light-emitting Diodes (LEDs) P-GaN Rapid Thermal Annealing

作者: Zhinong Yu Yanfei Gao Jong-Wook Seo

作者单位: Department of Optical Engineering, School of Information Engineering,Beijing Institute of Technology Information Science Department, School of Electrical and Information Engineering,Beijing Institute o School of Electronic and Electrical Engineering,Hongik University, Seoul 121 -791, Korea

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 1577-1581

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）