Au-Au Wafer Bonding in Vertical-structure GaN LED Fabrication

摘要：

Metallic bonding including Au-Au, Au-Si, Al-Al and Al-Si bonding were attempted, and the Au-Au diffusion bonding with the best interface quality and nearly 100％ bonded area was used to fabricate the vertical InGaN-GaN light-emitting diodes (LEDs) on 50-mm Si substrate. After the wafer bonding, a KrF excimer laser was used to separate the GaN layer from the grown sapphire substrate. The underlying mechanisms in above metallic bonding pairs were investigated by SAM (Scanning acoustic micrographs) and SEM (Scanning electron microscope).

关键词： Wafer Bonding GaN Light-emitting Diode Lift-off

作者: X. Ou X. Wang J. Chen J. Y. Sun A.M. Wu X. Wang

作者单位: The State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 1638-1641

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）