Characteristics of Organic Thin-film Transistors with the Synthesized Photo-reactive Polymeric Gate Insulator
In this study, the photo-reactive polymeric gate insulator was synthesized and the electrical characteristics of organic thin film transistors (OTFTs) according to the UV-exposure direction onto the gate insulator were investigated. The photo-reactive polymer was prepared by substituting hydroxyl group in Poly(4-vinylpbenol) (PVP) with cinnamoyl group. The UV-exposure treatment can modify the interface properties between semiconductor and polymer gate dielectric, there by influencing the electrical characteristics of OTFTs. These results show that the polarization direction of the photo-reactive insulator can affect the device performance.
Organic Thin Film Transistors Photo-align Pentacene Surface Treatment
K. W. Bong J. Park H. Kim J. M. Kang H.M. Kim H. J. Lee M. H. Yi J. S. Choi
Dept. of Electrical, Information & Control Engineering, Hongik University 72-1, Sangsu-dong, Mapo-gu Dept. of Advanced Materials Div, Korea Research Institute of Chemical Technology Yuseong-gu,Daejeon,
国际会议
上海
英文
1670-1673
2007-03-12(万方平台首次上网日期,不代表论文的发表时间)