Contact Resistance Variation of Top-contact Organic Thin Film Transistor with the Deposition Rate of Au Electrode
The performance of organic thin film transistors (OTFTs) can be influenced by geometrical or extrinsic factors. Among these factors, contact resistance between source/drain electrodes and organic semiconductor layer is one of the critical parameters for the performance of OTFTs. In this study, contact resistances were extracted from the measured characteristics of top-contact OTFTs with various channel lengths for different deposition rates of Au for the source/drain contacts. It is observed that the extracted contact resistances were on the range of about 106- 1011Ω with the significant gate-bias dependence and could be lowered with increasing the deposition rate of Au.
Organic Thin Film Transistor Pentacene Contact Resistance
Jong Mook Kang Jaehoon Park Hyunsuck Kim Kang Wook Bong Hyun Jung Lee Hye Min Kim Jae Hyuk Kim Jong Sun Choi
Department of Electrical, Information and Control Engineering, Hongik University 72-1 Sangsu-dong, Mapo-gu, Seoul 121 -791, Korea
国际会议
上海
英文
1678-1681
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）