OTFT with a PMMA Modified Composite Insulator

摘要：

An organic thin-film transistors (OTFTs) with compound insulator have been made. The structure of compound insulator : SiO2/SiNx./SiO2/PMMA. A 50 nm PMMA layer was coated on top of the SiO2 gate insulator as additional insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layers is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical parameters such as carrier mobility and on/off ratio by field effect measurement have been calculated. OTFT based on ITO glass substrate with a field-effect mobility of 0.003 cm2/Vs and on/off ratio of 104 have been obtained.

关键词： Organic Thin Film Transistor Mobility PMMA On/off Ratio

作者: X.Liu Hsin-Ying Lee Ching-Ting Lee Y.Bai L.Chen W.Xu F.X. Wei X.B. Zhang W.Q. Zhu X.Y. Jiang Zh.L. Zhang

作者单位: Key Laboratory of Advanced Display and System Application, Ministry of Education,Shanghai University Institute of Microelectronics, Department of Electrical Engineering,National Cheng Kung University,

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 1693-1695

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）