Gate Dielectric Integrity of All Organic Thin Film Transistor and Annealing Effect
A significant degradation in the organic gate dielectric integrity is reported when an organic thin film transistor (OTFT) is exposed to air. The OTFT with polystyrene (PS) gate dielectric shows an increased /OFF when the device has been exposed to air for a few weeks. The increased 7OFF is found to be attributed to degraded PS insulator property. The poor integrity of the gate dielectric causes an excessive /OFF of the OTFT. Interestingly, the gate leakage current can be suppressed after the device is subjected to a few I - V tests at elevated temperatures and then reasonable /OFF can be recovered.
OTFTS Pentacene Polymer Dielectric Polystyrene Anneal Gate Leakage
Sung Hun Hong Jong Mook Kang Towoo Lim Jae Hyeok Kim Jong Sun Choi Young Min Kim
Dept. of Electrical, Information &Control Engineering,Hongik University Seoul, 121 -791, Korea
国际会议
上海
英文
1696-1699
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）