Analysis of C-V Characteristics of MIS Structure Using P3HT and Various Gate Insulators
The performance of OTFT depends on the gate insuIator(GI) and active layer. Therefore, this paper presents C-V characteristics of various gate insulators which may be used in the fabrication of OTFT devices using P3HT as an active layer in order to find the best gate insulator for OTFT devices with P3HT. Poly(4-vinylphenol) (PVP), poly (vinyl alcohol) (PVA), poly(9-vinylcarbazole)(PVK), benzocyclobutene(BCB) and polyimide(PI) were used as polymer GIs for the soluble process, and poly ( 3-hexylthiophene) ( P3HT) of p-type, which has a relatively high mobility of 0.1 cm2V-1s-l, was selected as an active layer. The C-V of metal-insulator-semiconductor( MIS) was measured and analyzed for the drive ability. The spin coating rpm and following bake temperature of P3HT active layer were varied in order to evaluate their effect to the C-V results. The C-V measurement of the fabricated MIS structures were performed at 100 kHz at the bias from to -5 V to 5 V with a 0.1 V step. Also, the C-V measurement frequency was varied to 100 Hz, 1 kHz, 10 kHz and 100 kHz to investigate the low-f and high-f results. The measured capacitances per unit area for of PVP, PVA, PVK, BCB and PI were 1.06, 2.73, 2,94, 3.43 and 2.78 nF/cm2, and threshold voltages were -0.4, -0.7, -1.6,-0.1 and -0.2 V, respectively. As the frequency increased, the all capacitances decreased, however the range of the change was only within 1.0-1.5 nF/cm2. The C-V characteristics of the MIS structures were not affected by, and the P3HT thickness or baking condition. It is also suspected that the morphology of P3HT was related with difference of the capacitance and the hole mobility, the combination of PVK and P3HT showed the best result for the OTFT device, which showed continuous capacitance of 3.43 nF/cm2 and the lowest Vth of -1.6V.
Gate Insulator P3HT C-V Characteristics Capacitance
Jung-Seok Kim Byoung-min Kim Jong-hyeon Chang Byoung Kwon Ju James Jungho Pak
Department of Electrical Engineering, Korea University, Korea
国际会议
上海
英文
1708-1712
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）