Oxygen Content on the Influence of the Electrical and Optical Properties of ITO Thin Films Made by DC Magnetron Sputtering
Using In/Sn alloy as target, samples were got with different oxygen content by changing the oxygen flux when making the ITO thin films, then annealed at different temperature of 400℃ and 600℃ under air ambience. The square resistances of the samples before and after annealing were gained by using the four-point probe measurement. Utilizing the scanning electron microscope to analyze the surface ingredients of the samples and the Perkinelmer Instruments LAMBDA 900 photometer to measure the transmittance of the samples, this paper got a conclusion: changing the oxygen flux during the preparation of ITO thin nuns to infect the oxygen content of samples can result in that the square resistance and transmittance of different samples with the increasing of the annealing temperature varied in a different law.
ITO Thin Film DC Magnetron Sputtering Anneal Square Resistance Transmittance
Jingting Wei Yuchun Feng Zhang Wei Xinping He Junwei Lin
Institute of Optoeletronics, Shenzhen University, Shenzhen 518060, China
国际会议
上海
英文
1747-1751
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）