Influence of the Thickness of Super Lattice Interlayer on the Dislocation Density of HT-GaN on Si(111)
To decrease the dislocation density of HT-GaN on Si (111) with meralorganic chemical vapor deposition (MOCVD), super lattice interlayer is introduced. The super lattice with mutative interface can effectively prevent the dislocation originating from the buffer layer from penetrating to the surface of GaN film. The influence of the thickness of super lattice interlayer on the dislocation density of HT-GaN on Si (111) is investigated in this article. Three samples with different thickness of super lattice layer are studied. The high-resolution double crystal X-ray diffraction (DCXRD) is used to analyze the crystal quality. Furthermore, the three samples are etched by H3PO4 +H2SO4 mixed resolution and melted KOH respectively and then observed by scanning electron microscopy (SEM). The later experiment shown that the dislocation density of anyone of the three samples etched by H3PO4 + H2SO4 mixed resolution apparently higher than that etched by melted KOH, which further justify the reported conclusion that H3 PO4 + H2 SO4 mixed resolution etch screw dislocation and mixture dislocation while melted KOH etch screw dislocation. Both experiments shows that modest thickness of super lattice interlayer effectively decline the dislocation density of HT-GaN on Si( 111).
GaN Si(111) Super Lattice Dislocation Density
Xiaofeng Liu Yuchun Feng Dongsheng Peng
Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China Xi an Institute of Optics and Precision Mechanics Chinese Academy of Sciences, Xian 710068, China
国际会议
上海
英文
1752-1756
2007-03-12(万方平台首次上网日期,不代表论文的发表时间)