Indium Tin Oxide Films Prepared by Radio Frequency Magnetron Sputtering under Low Vacuum Level
We have prepared indium tin oxide (ITO) thin films using radio frequency (RF) magnetron sputtering and under a quite low vacuum level of 2. 3 × 10-3 Pa. The sputtering was done in an AT and O2 gas mixture at a temperature of 200℃. A ceramic In2O3: SnO2 target (10 wt％ SnO2) was used. The microstructurcs of the films were investigated by a field emission scanning electron microscope (FESEM) and an X-ray diffractometer (XRD). X-ray photoelectron spectroscopy (XPS) was performed to characterize the compositions of the films. ITO films with a high transparency in die visible wavelength range (80％-95％ ) were obtained. At a low working pressure (1 Pa), the more highly transparent and conductive films were produced at the lower O2 flow ratio. At a high working pressure (2 Pa), low quality, low transparency and amorphous films were obtained.
Indium tin oxide Thin film Radio frequency magnetron sputtering X-ray photoelectron spectroscopy
X. D. Li H. B. Zhu J. B. Chu S. Y. Huang Z Sun Y. W. Chen S. M. Huang
Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University,North Zhongshan Rd. 3663, Shanghai 200062, China
国际会议
上海
英文
1844-1848
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）