Photoluminescence Analysis of Nanocrystal-line Diamond Films Deposited by EA-HFCVD
Nano-crystalline diamond films with a grain size of 30 nm were deposited on pretreated Si wafer surface via electron assisted-hot filament chemical vapor deposition (EA-HFCVD) method with a bias current of 6 A applied for 1 h, followed with no bias current for 3 h at 0.8 kPa gas pressure. A photoluminescence (PL) study was carried out by Raman spectrometer in me wavelength range of 700-900 nm. Four emission bands centered at 1.682 eV, 1.564eV, 1.518eVand 1.512 eV were observed. The 1.682 eV feature was attributed to the silicon impurity from the substrate, the 1.564 eV feature to the local vibration mode of the defect, and the others bands to diamond lattice phonons. The higher the PL intensity is, the more the defects have and the Lower the threshold field is. The key of die mechanism for this result may be due to conducting grain boundaries, which allows the field emission to be much easier.
Photoluminescence Nano-crystalline Diamond Runs HFCVD
Xuefeng Zhu Linjun Wang Guang Hu Juanmin Liu Jian Huang Jinyong Xu Yiben Xia
School of Materials Science and Engineering, Shanghai University,Shanghai 200072, China
国际会议
上海
英文
2149-2153
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）