Studies of Photoluminescence of Silicon Nitride Thin Films Deposited by R. F. Magnetron Sputtering
This work is focused on the enhancement in photoluminescence (PL) of SiNx deposited by radio frequency magnetron sputtering. The main photoluminescence emission recorded under different Ar/N2 gas flow rado shows an increase of emission intensity. These results were considered of quantum size effect of strongly absorbing silicon nanostnictures (ns-Si) formed in the SiNx matrix with different sizes according to different stoechiometries. In this work the optical properties of the films, including refractive index n (λ) indicate a correlation with film stoechiometry and microstmcture. In order to investigate the PL intensity, the crystalline silicon quantum dots (Si QDs) formed in SiN, matrix were confirmed by measuring Raman spectra.
Nitrogen Silicon Nanostnictures,Silicon Quantum Dots
Xiaoyun Jia Zheng Xu Suling Zhao Chunlan Zhou Yuan Li Yu Tang
Institute of Optoelectronics Technology, Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information,Ministry of Education,Beijing 100044,China
国际会议
上海
英文
2155-2158
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）