First-principle calculation and preparation of Sn-doped GaN films

摘要：

We have employed the first-principle calculations based on density functional theory to study the effect of Sn-doped on electronic structure and electrical characteristics of GaN. The results reveal that Sn acts as a shallow donor in GaN with ionization energy about ～31 meV. In addition, samples of Sn-doped GaN were deposited by reactive DC magnetron sputtering (DCMS) and Hall effect measurement results showed that doping effect of Sn was confirmed. Thus, its concluded that Sn is a good candidate for the N-type doping of GaN films.

作者: Zhenguo Ji Yi Zhao

作者单位: Institute of electronic information, Hangzhou Dianzi University Hangzhou 310018,China;State Key Labo Institute of electronic information, Hangzhou Dianzi University Hangzhou 310018,China

会议类型: 国际会议

会议名称: The 3rd International Conference of Molecular Simulations and Applied Informatics Technologies(第三届国际分子模拟与信息技术应用学术会议)

会议地点: 杭州

会议语种:英文

页码: 277-282

在线出版日期: 2007-04-01（万方平台首次上网日期，不代表论文的发表时间）