PMOSFET-Type Photodetector with High Responsivity for CMOS Image Sensor
In this paper, a new photodetector using a PMOSFET-type photodetector with a transfer gate has been designed and fabricated using a 0.35 μm standard CMOS technology. The photodetector is composed of a floating gate that is tied to an n-well and a transfer gate. The transfer gate controls the photocurrent flow by controlling the barrier for holes in the PMOSFET-type photodetector. The designed photodetector has similar IDS-VDS characteristics as those of a general PMOSFET when the incident light power, instead of the gate voltage, is varied. The area of the proposed photodetector is 3.8 μm × 5.7 μm and the responsivity is larger than 2.7 × 102 A/W at a wavelength of 632.8 nm.
photodetector PMOSFET transfer gate.
Sang-Ho Seo Kyung-Do Kim Jang-Kyoo Shin Youze Cho Hong-Bae Park Pyung Choi
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
国际会议
2006 IEEE International Conference on Information Acquisition
山东威海
英文
871-876
2006-08-20（万方平台首次上网日期，不代表论文的发表时间）