A Zinc Oxide modified Porous Silicon humidity sensor
In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450℃. By this technique, it is possible to obtain a uniform zinc oxide film on the porous silicon substrates. The electrical conductivities of the porous silicon and zinc oxide/porous silicon structures under different humidity levels were measured. It is indicated that the modification of the porous silicon by sol-gel zinc oxide increase the sensitivity and shorten the response time to the relative humidity.
modified Porous Silicon Zinc Oxide humidity sensor sol-gel
Tao Jiang Xiaofeng Zhou Jian Zhang Yanling Shi Tianxing Luo
Department of Electrical Engineering, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062, China
国际会议
2006 IEEE International Conference on Information Acquisition
山东威海
英文
1158-1162
2006-08-20（万方平台首次上网日期，不代表论文的发表时间）