Nanodiamond lateral field emission devices: fabrication, emission current scaling, temperature- and radiation-tolerance
A field emission device in lateral configuration is a favourable construct for electron emission due to versatility for electrode geometry design, precise control of anode-cathode spacing, and low capacitance. The development of micropatterning nanodiamond (ND) films using reactive ion etching has been critical to the utilization of ND as an electron emitter. We have fabricated lateral devices with high aspect ratio, finger-like ND emitters with sharp apexes and investigated how the number of emitters scales with respect to the forward emission current derived from the ND lateral device. We also report total dose (15 Mrad(SiO2)) and high temperature (＞200 ℃) tests on these devices. No measurable change in the device performance is observed under adverse operating conditions.
W. P. Kang K. Subramanian J. L. Davidson B. K. Choi M. Howell
Dept. of Electrical Engineering & Computer Science, Vanderbilt University, TN 37235, USA
国际会议
桂林
英文
39-40
2006-07-17（万方平台首次上网日期，不代表论文的发表时间）