Field emission from surface-reconstructed phosphorus-doped homoepitaxial diamond (111)
We report for the first time about field emission from carbon-reconstrcuted phosphorus-doped homoepitaxial diamond surfaces. In order to achieve surface reconstruction, annealing at 950 ℃ for 60 min in a high vacuum system has been applied. Field emission shows the lowest threshold field for the carbon reconstructed surface of 16 V/μm, while the threshold fields for oxidized and hydrogen-terminated surface are 28 V/μm and 44 V/μm, respectively. A model is introduced to discuss these results, which takes into account effective electron affinities and tunneling of electrons from the conduction band minimum and from the donor level.
T. Yamada H. Yamaguchi Y. Kudo K. Okano H. Kato S. Shikata C. E. Nebel
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST),1-1 Department of Physics, International Christian University (ICU), 3-10-2 Osawa, Mitaka 181-8585, Japa
国际会议
桂林
英文
213-214
2006-07-17(万方平台首次上网日期,不代表论文的发表时间)