Measurement of field emission property on the individual silicon nanowire by scanning tunneling microscopy

摘要：

Silicon nanowires (SiNWs) array are expected to be a promising cathode in field emission devices. We report field emission (FE) characteristic on individual SiNW apex by using Scanning Tunneling Microscopy (STM) operated in field emission mode at room temperature in ultrahigh vacuum condition. The result revealed the SiNWS has good emission characteristic. In addition, we verified the FN theory was also applicable in micro-scale field emission process through numerical value simulation of the field emission process.

作者: W W Ming Jian Chen J C She J Zhou W G Xie S Z Deng N S Xu

作者单位: State Key Laboratory of Optoelectronic Materials and Technologies, and Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou 510275, Peoples Republic of Chin

会议类型: 国际会议

会议名称: 19Th International Vacuum Nanoelectronics Conference & 50th International Field Emission Symposium(第19届真空微纳国际年会暨第50届场致发射国际会议)

会议地点: 桂林

会议语种:英文

页码: 277-278

在线出版日期: 2006-07-17（万方平台首次上网日期，不代表论文的发表时间）