Fabrication of local micro vacuum package incorporating Si field emitter array and Ti getter

摘要：

Field emitter has high speed response characteristics at over 100 GHz because they utilize the electron emission in a vacuum. Therefore, field emission device are very suitable for use as high speed switching elements, and practical field emitters can be fabricated by using Si process. Consequently we have fabricated a local vacuum package on a Si substrate that is adapted to IC process for on-chip integrated devices. This has the great advantage that devices can be aligned on a micro mater size, and is very useful for many applications involving high performance on-chip integrated devices.

作者: Daiji Noda Masanori Hatakeyama Kichinosuke Nishijyou kazuaki Sawada Makoto Ishida

作者单位: Laboratory of Advanced Science and Technology for Industry, University of Hyogo 3-1-2 Koto, Kamigori Department of Electrical and Electronic Engineering, Toyohashi University of Technology Department of Electrical and Electronic Engineering, Toyohashi University of Technology;Core Researc

会议类型: 国际会议

会议名称: 19Th International Vacuum Nanoelectronics Conference & 50th International Field Emission Symposium(第19届真空微纳国际年会暨第50届场致发射国际会议)

会议地点: 桂林

会议语种:英文

页码: 387-388

在线出版日期: 2006-07-17（万方平台首次上网日期，不代表论文的发表时间）