Gated-field emission arrays with single carbon nanotubes grown on Mo tips

摘要：

In this work, we focus our attention on fabrications and characterizations of micro-gated-field emission arrays with CNTs grown on Mo tips (CNT FEAs). By further optimizing processing parameters, such as thickness of the sacrificial layer and height of Mo tips, the percentage of single CNTs increased to more than 50％. The I-V measurement of an array with 11000 cells at a gate voltage of 92 V showed an anode current of 1.2 mA, corresponding a current density of 0.57A/cm2, with a gate current 3.3％ of the anode current.

作者: Ming Q. Ding Wensheng Shao Changqing Chen Xinghui Li Guodong Bai Fuquan Zhang Banyan Li Jin Jun Feng

作者单位: National Laboratory for Vacuum Electronics, Beijing Vacuum Electronics Research Institute, P. O. Box 749, Beijing 100016

会议类型: 国际会议

会议名称: 19Th International Vacuum Nanoelectronics Conference & 50th International Field Emission Symposium(第19届真空微纳国际年会暨第50届场致发射国际会议)

会议地点: 桂林

会议语种:英文

页码: 431-432

在线出版日期: 2006-07-17（万方平台首次上网日期，不代表论文的发表时间）