The comparison between GaN thin film grown by femtosecond pulsed laser deposition and nanosecond pulsed laser deposition
GaN is considered to be an interesting material for field emission cathodes due to its stability. GaN thin films have been grown by femtosecond pulsed laser deposition (PLD) and nanosecond PLD. X-ray diffraction (XRD) and scanning electronic microscope (SEM) were used to characterize the structural properties of the deposited GaN thin films. The results show demonstrated that there were great potential applications of the femtosecond PLD for GaN thin films growth at low temperature.
X.L.Tong D.S.Jiang Z.M.Liu L. Liu
Key Laboratory of Fiber Optic Sensing Technology and Information Processing (Wuhan University of Technology), Ministry of Education, Wuhan 430070, P.R.China
国际会议
桂林
英文
475-476
2006-07-17(万方平台首次上网日期,不代表论文的发表时间)