会议专题

The comparison between GaN thin film grown by femtosecond pulsed laser deposition and nanosecond pulsed laser deposition

GaN is considered to be an interesting material for field emission cathodes due to its stability. GaN thin films have been grown by femtosecond pulsed laser deposition (PLD) and nanosecond PLD. X-ray diffraction (XRD) and scanning electronic microscope (SEM) were used to characterize the structural properties of the deposited GaN thin films. The results show demonstrated that there were great potential applications of the femtosecond PLD for GaN thin films growth at low temperature.

X.L.Tong D.S.Jiang Z.M.Liu L. Liu

Key Laboratory of Fiber Optic Sensing Technology and Information Processing (Wuhan University of Technology), Ministry of Education, Wuhan 430070, P.R.China

国际会议

19Th International Vacuum Nanoelectronics Conference & 50th International Field Emission Symposium(第19届真空微纳国际年会暨第50届场致发射国际会议)

桂林

英文

475-476

2006-07-17(万方平台首次上网日期,不代表论文的发表时间)