A Low Noise Amplifier for Ultra-wideband Systems in 0.13μm CMOS Technology
This paper presents a low noise amplifier (LNA) in 0.13 μm CMOS for ultra-wideband (UWB) receiver. The LNA has a peak gain of 27 dB and a 3.0 – 10.7 GHz –3dB bandwidth. Its input impedance matching is better than -5 dB and output matching is less than -15dB. Its lowest noise figure (NF) is 0.4 dB and the average NF is 3 dB. The LNA achieves NFmin performance over the entire bandwidth by using a power-constrained simultaneous noise and input matching concept. Its power consumption is only 4.8 mW with a 1.2 V power supply, for amplifier core and 1.8 mW in output buffer. A comparison with recently published UWB LNA shows that this design exhibits the best overall performance in terms of gain, NF and power consumption.
Zhila Amini Sheshdeh Sabrieh Choobkar Abdolreza Nabavi
Faculty of Engineering Tarbiat Modares University Tehran, Iran
国际会议
2006 International Conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)
广西桂林
英文
788-791
2006-06-25(万方平台首次上网日期,不代表论文的发表时间)