High-quality Solenoid Inductors on Silicon Wafers

摘要：

A solenoid inductor with a peak quality factor (Qmax) of 33.4 at 4.6 GHz has been realized on standard silicon wafers with a low-k dielectric layer using surface micromachining techniques. Experimental results show that the 6-turn inductor with an aspect ratio (AR) of 0.5 gives a 98％ increase in Qmax, 40％ increase in L/A ratio and 245％ increase in SRF as compared to the 6-turn inductor with an aspect ratio of 0.1. The improvement of Qmax is mainly due to the reduced series resistance and parasitic capacitance between the inductor and the silicon substrate.

作者: Chih-Ming Tai Chien-Neng Liao

作者单位: Department of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013, Taiwan

会议类型: 国际会议

会议名称: 2006 International Conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)

会议地点: 广西桂林

会议语种:英文

页码: 866-869

在线出版日期: 2006-06-25（万方平台首次上网日期，不代表论文的发表时间）