A New CMOS Current Reference with High Order Temperature Compensation

摘要：

A new high order CMOS temperature compensated current reference is proposed in this paper, which is accomplished by two first order temperature compensation current references. The novel circuit exploits the temperature characteristics of integrated-circuit resistors and gate-source voltage of MOS transistors working in weak inversion. The proposed circuit, designed with a 0.6 μm standard CMOS technology, gives a good temperature coefficient of 31ppm/℃ -50～100 ℃ at a 1.8 V supply, and also achieves line regulation of 0.01％/V and .120dB PSR at 1 MHz. Comparing with other presented work, the proposed circuit shows better temperature coefficient and Line regulation.

作者: Zhou Hao Zhang Bo Li Zhao-ji Luo Ping

作者单位: School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Chengdu China

会议类型: 国际会议

会议名称: 2006 International Conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)

会议地点: 广西桂林

会议语种:英文

页码: 2189-2192

在线出版日期: 2006-06-25（万方平台首次上网日期，不代表论文的发表时间）