A Sub-1-V Low-Voltage Low-Power Voltage Referencewith a Back-Gate Connection MOSFET

摘要：

A sub-1-V self-biased low-voltage low-power voltage reference is presented for micropower electronic applications. And the proposed circuit has very low temperature dependence by using a back-gate connection MOSFET. An Hspice simulation shows that the reference voltage and total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/℃ within a temperature range from -40 to 100 ℃. The supply voltage dependence is -0.36 mV/V (Vdd=0.95～3.3 V). Supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively.

作者: Jun PAN Yasuaki INOUE

作者单位: Graduate School of Information, Production and Systems, Waseda University Kitakyushu-shi, Fukuoka, 808-0135 Japan

会议类型: 国际会议

会议名称: 2006 International Conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)

会议地点: 广西桂林

会议语种:英文

页码: 2314-2318

在线出版日期: 2006-06-25（万方平台首次上网日期，不代表论文的发表时间）