A 10 GHz VCO in SiGe BiCMOS Technology

摘要：

In this paper, a 10 GHz VCO (Voltage Controlled Oscillator) based on 0.35um SiGe BiCMOS technology is presented. It is designed for 10 Gb/s CRC (Clock Recovery Circuit) in optical communication systems and X band wireless applications. Cross coupled differential topology is adopted. It can operate from 9.78 GHz to 10.35 GHz with a phase noise of -106 dBc/Hz at 1 MHz offset. For the 1.8 V supply voltage, the total power consumption is 12 mW. And the chip area is only 0.17 mm2.

作者: Guo Xuefeng Wang Zhigong Li Zhiqun

作者单位: Institute of RF- & OE-ICs Southeast University Sipailou 2, 210096 Nanjing, China

会议类型: 国际会议

会议名称: 2006 International Conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)

会议地点: 广西桂林

会议语种:英文

页码: 2485-2487

在线出版日期: 2006-06-25（万方平台首次上网日期，不代表论文的发表时间）