A Wide-Band 2 π Equivalent-Circuit Model for Spiral Inductors on Silicon
For monolithic RF spiral inductor on high-loss silicon substrate, a novel physical model is proposed, in which functions of skin effect, proximity effect and eddy current losses in the substrate to frequency-dependent series parameters Ls and Rs are accounted in the light of modified partial equivalent element circuit methodology and a full-coupled transformer loop and, in the meanwhile, distributed characteristics of parasitic capacitance are captured by 2π equivalent-circuit. Up to 15GHz, the model reveals quite good accuracy within 8％ with data from full-wave electromagnetic filed simulator, including equivalent inductor Leff, resistor Reff and quality factor Q and, hopefully, it can be applied to further theory research and optimum design of RFIC spiral inductor on Si.
Xiang-zhan Wang Jun Ren Fan Yang Wei Zheng Qi Yu Ning Ning Mo-hua Yang
School of Microelectronics and Solid State Electronics University of Electronic Science & Technology of China Chengdu, Sichuan, P. R. China
国际会议
2006 International Conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)
广西桂林
英文
2605-2609
2006-06-25（万方平台首次上网日期，不代表论文的发表时间）