An Ultra-Wideband and Low-Power Amplifier Using 0.35-μm SiGe BiCMOS Technology

摘要：

We propose a unique wideband amplifier configuration. The new configuration adopts an improved Darlington amplifier to broaden the bandwidth and flatten the output gain. The low power consumption and matched impedances are also achieved in our amplifier. This circuit has been realized using Toshiba 0.35μm SiGe BiCMOS technology with the fT of 30GHz. The simulation result of the presented amplifier demonstrates 1-10GHz bandwidth and 11.3-dB maximum forward gain (S21) with less than ±0.5-dB gain flatness while it drains 8mA from a 3-V supply. A 1-dB compression point and an ⅡP3 of -12.5dBm and 6dBm respectively also have been reported in this paper.

作者: Jia.Chen Toshihiko.Yoshimasu Nobuyuki.Itoh Koji.Yonemura

作者单位: WeiLiang. Hu, Haiwen. Liu Graduate School of IPS Waseda University 2-7, Hibikino, 808-0135, JAPAN Semiconductor Company Toshiba Cor JAPAN

会议类型: 国际会议

会议名称: 2006 International Conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)

会议地点: 广西桂林

会议语种:英文

页码: 2614-2617

在线出版日期: 2006-06-25（万方平台首次上网日期，不代表论文的发表时间）