A New Reduced Bulk Field (REBULF) High-Voltage LDMOS with N+ -Floating Layer
A novel concept of REBULF (REduced BULk Field) is proposed for the development of smart power integrated circuit with thin epitaxy layer, and a new device structure of Reduced BULk Field LDMOS with N+-Floating Layer embedded in the high-resistance substrate is designed. The mechanism of improved breakdown characteristics is that the high electric field around the drain is reduced by N+-Floating Layer which causes the redistribution of the bulk electric field in the drift region, and the substrate supports more biases. The critical condition of REBULF is analyzed and validated by 2-D MEDICI simulator, which is the product of the location of N+-Floating layer and substrates doping isnt more than 1×1012cm-2, and the breakdown voltage of REBULF LDMOS is increased by 75％ in comparison to RESURF LDMOS.
Baoxing Duan Bo Zhang Zhaoji Li
Research Institute of Micro-Electronics University of Electronic Science and Technology of China No. 4, Section 2, North Jianshe Road Chengdu, Sichuan, China
国际会议
2006 International Conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)
广西桂林
英文
2709-2712
2006-06-25（万方平台首次上网日期，不代表论文的发表时间）