Design and Fabrication of a High Performance LDMOSFET with Step Doped Drift Region on Bonded SOI Wafers
The SOI LDMOSFETs with step doping profiles in drift region have been experimentally investigated. Uniform, single-step and two-step doped drift regions have been designed and fabricated on a same bonded SOI wafer with the top silicon layer of 3μm and buried oxide layer of 1.5μm. The experimental devices with two-step doping profile have a breakdown voltage in access of 250V and specific on-resistance of 1.6 Ωmm2. Furthermore, the breakdown characteristic and forward conduction characteristic for the various step doping profiles were measured and compared. The results show two-step doping can enable increase in the breakdown voltage by 40％ and decrease in on-resistance by 16％ in comparison to the conventional uniformly doped drift device.
Yufeng Guo Zhaoji Li Bo Zhang
College of Optioelectronic Engineering Nanjing University of Posts and Telecommunications,Nanjing, J Center of IC Design University of Electronic Science and Technology of China,Chengdu, Sichuan, 61005
国际会议
2006 International Conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)
广西桂林
英文
2741-2744
2006-06-25（万方平台首次上网日期，不代表论文的发表时间）