Ideal N-type SiC/metal Contacts by Reduction of the Density of Interface State

摘要：

The ideal SiC/metal contacts were formed by controlling the barrier height on the ideal SiC surface. The ideal SiC surface was realized by lowering the density of surface states owing to SiC surface hydrogenation. The mechanism of surface hydrogenation was studied in this paper. Using the surface hydrogenation treatment, SiC Schottky diodes with ideality factor of 1.2～1.25 and ohmic contacts with specific contact resistance of 5×10-3～7×10-3Ω.cm2 were obtained below 100℃ for the first time. Its advantages lay in not only avoiding the annealing at 800-1200℃ for Ohmic contacts in the conventional process, but also improving the electrical performances of SiC Schottky diodes.

作者: Xiaorong Luo Bo Zhang Zhaoji Li

作者单位: IC Center of college of Microelectronics and Solid-State Electronics University Electronic Science & Technology of China Chengdu, Sichuan, China

会议类型: 国际会议

会议名称: 2006 International Conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)

会议地点: 广西桂林

会议语种:英文

页码: 2745-2747

在线出版日期: 2006-06-25（万方平台首次上网日期，不代表论文的发表时间）