Experimental Evidence of Short-Channel Electron Mobility degradation caused by Interface Charges located at the Gate-Edge of Triple-Gate FinFETs

会议类型: 国际会议

会议名称: 2006 8th International Conference on Solid-State and Integrated Circuit Technology(第八届国际固态和集成电路技术会议)

会议地点: 上海

会议语种:英文

页码: 72-74

在线出版日期: 2006-10-23（万方平台首次上网日期，不代表论文的发表时间）