Light emissions from a silicon nanocrystal thin film prepared by phase separation of hydrogen silsesquioxane
We report a facile method to prepare thin film of Si nanocrystals embedded SiO2(Si-NC:SiO2)by annealing a photoresist of hydrogen silsesquioxane(HSQ)at 1100℃ in nitrogen via a phase separation process.The spatial density,photoluminescence intensity,the photoluminescence efficiency and electroluminescence intensity of Si-NC of the sample made from HSQ,or HSQ sample,were 15.0,5.5,1.5 and 7.9 times as large as those of the sample made by a traditional method of annealing SiOx(1<x<2),or SiOx sample,respectively.Meanwhile,the turn-on voltage of electroluminescence of the HSQ sample was only 3.8 eV,which was more than 2 times smaller than that of the SiOx sample.The results of this work may find application in developing high brightness Si light sources.
Chi Zhang Dong-Chen Wang Zhi-Quan Zhou Fei Hu Ming Lu
Department of Optical Science and Engineering,and Shanghai Ultra-Precision Optical Manufacturing Engineering Center,Fudan University,Shanghai 200433,China
国内会议
厦门
英文
14-15
2017-05-25（万方平台首次上网日期，不代表论文的发表时间）