Ultrathin Crystalline Silicon Heterojunction Solar Cell Integrated on Silicon-on-insulator Substrate
To achieve power generation on inte-grated circuit (IC) chips, a hydrogenated amorphous silicon (a-Si∶H)/crystalline silicon (c-Si) heterojunction solar cell was designed and fabricated on silicon-on-insulator (SOI) substrate, where a 9-μm epitaxial p-type c-Si layer served as light absorption layer and the buried SiO2 (BOX) as back surface passivation layer.It was found that a 1-μm heavily doped thin p+-layer was vital for improving the cell performances.Efficiency up to 12.7% with an open-circuit voltage of 679.7 mV was achieved on a 1.0 cm2 square cell.Device performance was also investigated by annealing at different temperatures.The results suggested that relatively large thickness of a-Si∶H and transparent conductive oxide (TCO)layers could improve thermal stability of the solar cells at temperature above 300℃.
Power generation silicon hetero-junction solar cell silicon-on-insulator (SOI) thermal stability
Weiyuan Duan Jiantao Bian Jian Yu Jianhua Shi Zhengxin Liu
Research center for New Energy Technology,Shanghai Institute of Microsystem and Information Technolo Research center for New Energy Technology,Shanghai Institute of Microsystem and Information Technolo
国内会议
广州
英文
13-21
2015-05-01（万方平台首次上网日期，不代表论文的发表时间）