Superior broadband antireflection from buried Mie resonator arrays for high-efficiency photovoltaics
Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar cells.In this study, we provide a design guideline for buried Mie resonator arrays, which is composed of silicon nanostructures atop a silicon substrate and buried by a dielectric film, to attain a superior antireflection effect over a broadband spectral range by gaining entirely new discoveries of their antireflection behaviors.We find that the buried Mie resonator arrays mainly play a role as a transparent antireflection structure and their antireflection effect is insensitive to the nanostructure height when higher than 150 nm, which are of prominent significance for photovoltaic applications in the reduction of photoexcited carrier recombination.We further optimally combine the buried Mie resonator arrays with micron-scale textures to maximize the utilization of photons, and thus have successfully achieved an independently certified efficiency of 18.47% for the nanostructured silicon solar cells on a large-size wafer (156 mm× 156 mm).
broadband antireflection Mie resonators multi-scale textures high-efficiency photovoltaics silicon nanostructures
Sihua Zhong Yang Zeng Zengguang Huang Wenzhong Shen
Institute of Solar Energy,Department of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240
国内会议
广州
英文
31-42
2015-05-01（万方平台首次上网日期，不代表论文的发表时间）