Preparation of ITO/SiOx/n Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

摘要：

　　Complete photo-generated minority carrier”s quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiOx/n-Si heterojunction.The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field.Basing on the measured value of internal potential (Vbi=0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling oc-curs when a strong inversion layer at the c-Si surface appears.Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

关键词： Semiconductor-insulator-semiconductor structures photovoltaic effect Tunneling device

作者: H.W.Du J.Yang Y.H.Li F.Xu J.Xu Z.Q.Ma

作者单位: SHU-SolarE R&D Lab,Department of Physics,Shanghai University,Shanghai 200444,China Instrumental Analysis & Research Center,Shanghai University,Shanghai 200444,China SHU-SolarE R&D Lab,Department of Physics,Shanghai University,Shanghai 200444,China;Instrumental Anal

会议类型: 国内会议

会议名称: 第13届全国博士生学术年会——新能源专题

会议地点: 广州

会议语种:英文

页码: 89-97

在线出版日期: 2015-05-01（万方平台首次上网日期，不代表论文的发表时间）