用于加速制程工艺开发的自动电子显微镜工作流程

摘要：

Physical analysis workflows that can detect and resolve defects at sub-10nanometer scale Sub-angstrom data enables advanced process and device innovation High productivity electrical fault analysis delivers the highest TEM success rate.3D NAND and FinFET technology requires more information from buried and/or deep structures.Sub Surface metrology data with TEM level resolution is needed as part of process development.Automation of TEM prep and analysis enables:Full wafer characterization,Statistically significant amount of data to be collected,Cost of Ownership benefits.

关键词： 半导体集成电路 制程工艺 电子显微镜 自动化控制

作者: John Fretwell

作者单位: 赛默飞世尔科 技材料与结构分析事业部

会议类型: 国内会议

会议名称: 2018中国集成电路产业发展研讨会暨第21届中国集成电路制造年会

会议地点: 无锡

会议语种:中文

页码: 51-60

在线出版日期: 2018-09-13（万方平台首次上网日期，不代表论文的发表时间）