Ⅱ-Ⅵ/Ⅳ-Ⅵ Semiconductor Heterojunctions Grown by MBE and Two-Dimensional Electron Gas at Polar Interface
The two-dimensional electron gas(2DEG) at the interface of two materials with same crystal symmetry and similar lattice constants but different bandgaps has for many years been a fertile playground for discovering novel electron physics and new device applications.Ⅱ-Ⅵ compound semiconductor CdTe,Ⅳ-Ⅵ compound semiconductor PbTe and SnTe thin films,and CdTe/PbTe heterojunction have been grown by MBE.Using angle-resolved photoemission spectroscopy(ARPES),we studied bulk and surface electronic band structures of narrow-gap semiconductor PbTe thin films.
Huizhen Wu Zhneyu Ye Songsong Ma Tianyu Shu Bingpo Zhang
Department of Physics and State Key Laboratory for Silicon Materials,Zhejiang University,Hangzhou,Zhejiang,310027,People”s Republic of China
国内会议
太原
英文
30-30
2017-08-15（万方平台首次上网日期，不代表论文的发表时间）