Self-Catalyzed Core-Shell GaAs/GaNAs Nanowires Grown on Patterned Si(111)by Gas-Source Molecular Beam Epitaxy

摘要：

Group Ⅲ-Ⅴ semiconductor nanowires(NWs) on Si platform have attracted an increasing interest in recent years.By integrating the direct band gap Ⅲ-Ⅴ materials that have high absorption coefficient onto the cost-effective Si platform,it would create novel optoelectronic devices for Si photonics.Another advantage of Ⅲ-Ⅴ nanowires grown on Si substrate is that the lattice-match constraint can be relaxed.

作者: Rui La Ren Liu Weichuan Yao Mattias Janssond Shula Chend Janet L.Pan Irina A.Buyanovad S.A.Dayeh Charles W.Tu

作者单位: Graduate Program of Material Science and Engineering,University of California,San Diego,La Jolla,Cal Department of Electrical and Computer Engineering,University of California,San Diego,La Jolla,Califo Department of Physics,Chemistry and Biology,Link(o)ping University,Link(o)ping,Sweden 58183 Graduate Program of Material Science and Engineering,University of California,San Diego,La Jolla,Cal

会议类型: 国内会议

会议名称: 第十二届全国分子束外延学术会议

会议地点: 太原

会议语种:英文

页码: 51-52

在线出版日期: 2017-08-15（万方平台首次上网日期，不代表论文的发表时间）